Precise control of ion energy distribution functions (IEDF) is crucial for selectivity as well
as control over sputter rate and substrate damage in nanoscale plasma processes. In this
work, a low frequency (100 kHz) tailored pulse-wave-shaped bias voltage waveform is
applied to the substrate electrode of an inductively coupled plasma (ICP) and its effects
on the IEDF, electron density, electron dynamics and the etch rates of silicon dioxide as
well as amorphous silicon are investigated in a commercial 200 mm reactive ion etching
(RIE) reactor. While the tailored waveform substrate bias hardly affects the electron
density above the substrate and the spatio-temporally resolved electron power absorption
dynamics, it is found to affect the ion flux to the substrate at high ICP source powers.
Monoenergetic IEDFs with a full width at half maximum (FWHM) below 10 eV are
realized with mean ion energies ranging from 20 eV to 100 eV in both argon and SF6.
Using a modified voltage allows generating two independently controllable peaks in the
IEDF. The monoenergetic IEDFs are used to determine the Ar ion sputter threshold
energies of amorphous silicon and silicon dioxide to be 23 eV and 37 eV, respectively. This
enables selective etching of these two materials by Ar ion sputtering based on tailoring the
IEDF to ensure that all incident ions are within this narrow ion energy selectivity window.