{"help":"Return the metadata of a dataset (package) and its resources. :param id: the id or name of the dataset :type id: string","success":true,"result":[{"id":"d1f52318-5503-4915-887d-5c5277f33227","name":"multi-diagnostic-characterization-inductively-coupled-discharges-tailored-waveform-substrate","title":"Multi-diagnostic characterization of inductively coupled discharges with tailored waveform substrate bias for precise control of plasma etching","author_email":"giesekus@aept.rub.de","maintainer":"Research Data Repository","maintainer_email":"achim.vonkeudell@rub.de","license_title":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/","notes":"\u003Cp\u003EPrecise control of ion energy distribution functions (IEDF) is crucial for selectivity as well\u003Cbr \/\u003E\nas control over sputter rate and substrate damage in nanoscale plasma processes. In this\u003Cbr \/\u003E\nwork, a low frequency (100 kHz) tailored pulse-wave-shaped bias voltage waveform is\u003Cbr \/\u003E\napplied to the substrate electrode of an inductively coupled plasma (ICP) and its effects\u003Cbr \/\u003E\non the IEDF, electron density, electron dynamics and the etch rates of silicon dioxide as\u003Cbr \/\u003E\nwell as amorphous silicon are investigated in a commercial 200 mm reactive ion etching\u003Cbr \/\u003E\n(RIE) reactor. While the tailored waveform substrate bias hardly affects the electron\u003Cbr \/\u003E\ndensity above the substrate and the spatio-temporally resolved electron power absorption\u003Cbr \/\u003E\ndynamics, it is found to affect the ion flux to the substrate at high ICP source powers.\u003Cbr \/\u003E\nMonoenergetic IEDFs with a full width at half maximum (FWHM) below 10 eV are\u003Cbr \/\u003E\nrealized with mean ion energies ranging from 20 eV to 100 eV in both argon and SF6.\u003Cbr \/\u003E\nUsing a modified voltage allows generating two independently controllable peaks in the\u003Cbr \/\u003E\nIEDF. The monoenergetic IEDFs are used to determine the Ar ion sputter threshold\u003Cbr \/\u003E\nenergies of amorphous silicon and silicon dioxide to be 23 eV and 37 eV, respectively. This\u003Cbr \/\u003E\nenables selective etching of these two materials by Ar ion sputtering based on tailoring the\u003Cbr \/\u003E\nIEDF to ensure that all incident ions are within this narrow ion energy selectivity window.\u003C\/p\u003E\n","url":"https:\/\/rdpcidat.rub.de\/dataset\/multi-diagnostic-characterization-inductively-coupled-discharges-tailored-waveform-substrate","state":"Active","log_message":"Edited by IKorolov.","private":true,"revision_timestamp":"Thu, 11\/20\/2025 - 16:19","metadata_created":"Mon, 11\/17\/2025 - 10:59","metadata_modified":"Thu, 11\/20\/2025 - 16:19","creator_user_id":"ad54305c-0d65-4e06-9be1-cbf919642b6e","type":"Dataset","resources":[{"id":"7bd9af1d-0837-42ab-a983-4d8437deca4d","revision_id":"","url":"https:\/\/rdpcidat.rub.de\/sites\/default\/files\/Datasets.zip","description":"","format":"zip","state":"Active","revision_timestamp":"Mon, 11\/17\/2025 - 12:49","name":"Full datasets for all figures from the publication","mimetype":"application\/zip","size":"697.83 KB","created":"Mon, 11\/17\/2025 - 11:01","resource_group_id":"60dfa3fb-4113-4271-8531-8587fa07dcbe","last_modified":"Date changed  Mon, 11\/17\/2025 - 12:49"}],"tags":[{"id":"1bfe2d73-146c-4858-be50-a6796de90ecb","vocabulary_id":"2","name":"voltage waveform tailoring"},{"id":"58db6dbe-df9e-4755-9e3e-633c48763ecd","vocabulary_id":"2","name":"plasma etching"},{"id":"f3882a87-21d7-4322-a1b8-75fe40d26383","vocabulary_id":"2","name":"IEDF control"},{"id":"8186798f-3eb5-4751-a36f-44b9413f4ca2","vocabulary_id":"2","name":"plasma diagnostics"}],"groups":[{"description":"\u003Cp\u003EThe group \u0022Allgemeine Elektrotechnik und Plasmatechnik\u0022 at the faculty for engineering and information science.\u003C\/p\u003E\n","id":"60dfa3fb-4113-4271-8531-8587fa07dcbe","image_display_url":"https:\/\/rdpcidat.rub.de\/sites\/default\/files\/AEPT2.png","title":"AEPT","name":"group\/aept"}]}]}