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18 results
Surface modifications of aluminium and aluminium oxide induced by a treatment with a He-plasma jet and plasma electrolytic oxidation
AEPT
Erosion of an aluminium oxide surface as well as a formation of an aluminium oxide coating on an aluminium substrate, comparable with erosion and oxide formation induced by plasma electrolytic oxidation (PEO), can be caused at atmospheric...
Ion-induced secondary electron emission of oxidized nickel and copper studied in beam experiments
EP2
Ion-induced secondary electron emission at a target surface is an essential mechanism for laboratory plasmas, i.e. magnetron sputtering discharges. Electron emission, however, is strongly affected by the target condition itself such as oxidation...
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Modifications of an electrolytic aluminum oxide film under the treatment with microdischarges during plasma electrolytic oxidation, a self-organized dielectric barrier discharge (DBD) and a DBD-like plasma jet
AEPT
A key to the understanding of mechanisms during plasma electrolytic oxidation (PEO) is the interaction between microdischarges and an amorphous oxide film. The PEO microdischarges, which are randomly distributed on the surface of a treated...
Investigation of the frequency dependent spatio-temporal dynamics and controllability of microdischarges in unipolar pulsed plasma electrolytic oxidation
AEPT
The unipolar pulsed-plasma electrolytic oxidation (PEO) of aluminum has been replaced by bipolar pulsed methods that use a so-called 'soft-sparking' mode. This method results in an effective reduction of intense microdischarges, which are...
Potential Precursor Alternatives to the Pyrophoric Trimethylaluminium for the Atomic Layer Deposition of Aluminium Oxide
Inorganic Materials Chemistry
New precursor chemistries for the atomic layer deposition (ALD) of aluminium oxide are reported as potential alternatives to the pyrophoric trimethylaluminium (TMA) which is to date a widely used Al precursor. Combining the high reactivity of...
Low-Temperature Plasma-Enhanced Atomic Layer Deposition of Tin(IV) Oxide from a Functionalized Alkyl Precursor: Fabrication and Evaluation of SnO2-Based Thin-Film Transistor Devices
Inorganic Materials Chemistry
A bottom-up process from precursor development for tin to plasma-enhanced atomic layer deposition (PEALD) for tin(IV) oxide and its successful implementation in a working thin-film transistor device is reported. PEALD of tin(IV) oxide thin films...
PEALD of SiO2 and Al2O3 Thin Films on Polypropylene: Investigations of the Film Growth at the Interface, Stress, and Gas Barrier Properties of Dyads
Inorganic Materials Chemistry
A study on the plasma-enhanced atomic layer deposition of amorphous inorganic oxides SiO2 and Al2O3 on polypropylene (PP) was carried out with respect to growth taking place at the interface of the polymer substrate and the thin film employing in...
PEALD of HfO2 Thin Films: Precursor Tuning and a New Near-Ambient-Pressure XPS Approach to in Situ Examination of Thin-Film Surfaces Exposed to Reactive Gases
Inorganic Materials Chemistry
A bottom-up approach starting with the development of new Hf precursors for plasma-enhanced atomic layer deposition (PEALD) processes for HfO2 followed by in situ thin-film surface characterization of HfO2 upon exposure to reactive gases via near...
Low temperature growth of gallium oxide thin films via plasma enhanced atomic layer deposition
Inorganic Materials Chemistry
Herein we describe an efficient low temperature (60–160 °C) plasma enhanced atomic layer deposition (PEALD) process for gallium oxide (Ga2O3) thin films using hexakis(dimethylamido)digallium [Ga(NMe2)3]2 with oxygen (O2) plasma on Si(100). The...