The ion energy distribution functions (IEDF) have been measured for a helium atmospheric pressure dielectric barrier discharge jet expanding into the air and impacting a metal or ceramic surface. The plasma jet produces ionization waves as guided...
Catalysts are a critical component for chemical reactions in industrial applications. They are able to optimize selectivity, efficiency and reactions rates thus enabling more environmentally friendly processes. This work presents a novel approach...
Processes at the plasma boundaries, including the electrodes, can significantly influence plasma properties, among them the plasma density, the flux-energy distribution of various particle species, etc. The emission of secondary electrons, in...
Erosion of an aluminium oxide surface as well as a formation of an aluminium oxide coating on an aluminium substrate, comparable with erosion and oxide formation induced by plasma electrolytic oxidation (PEO), can be caused at atmospheric...
Ion-induced secondary electron emission at a target surface is an essential mechanism for laboratory plasmas, i.e. magnetron sputtering discharges. Electron emission, however, is strongly affected by the target condition itself such as oxidation...
A key to the understanding of mechanisms during plasma electrolytic oxidation (PEO) is the interaction between microdischarges and an amorphous oxide film. The PEO microdischarges, which are randomly distributed on the surface of a treated...
The unipolar pulsed-plasma electrolytic oxidation (PEO) of aluminum has been replaced by bipolar pulsed methods that use a so-called 'soft-sparking' mode. This method results in an effective reduction of intense microdischarges, which are...
New precursor chemistries for the atomic layer deposition (ALD) of aluminium oxide are reported as potential alternatives to the pyrophoric trimethylaluminium (TMA) which is to date a widely used Al precursor. Combining the high reactivity of...
A bottom-up process from precursor development for tin to plasma-enhanced atomic layer deposition (PEALD) for tin(IV) oxide and its successful implementation in a working thin-film transistor device is reported. PEALD of tin(IV) oxide thin films...
