German Science Foundation (DFG)
PEALD of SiO2 and Al2O3 Thin Films on Polypropylene: Investigations of the Film Growth at the Interface, Stress, and Gas Barrier Properties of Dyads
Unearthing [3‐(Dimethylamino)propyl]aluminium(III) Complexes as Novel Atomic Layer Deposition (ALD) Precursors for Al2O3: Synthesis, Characterization and ALD Process Development
Low temperature growth of gallium oxide thin films via plasma enhanced atomic layer deposition
Atomic/molecular layer deposition of hybrid inorganic–organic thin films from erbium guanidinate precursor
An efficient PE-ALD process for TiO2 thin films employing a new Ti-precursor
Comparison of electron heating and energy loss mechanisms in an RF plasma jet operated in argon and helium
Modular constructed metal-grid arrays - an alternative to silicon-based microplasma devices for catalytic applications
Fast charge exchange ions in high power impulse magnetron sputtering of titanium as probes for the electrical potential
SFB TR 87
The SFB-TR 87 combines the expertise in the areas of plasma physics / plasma technology, materials science / surface engineering and interfacial chemistry. On this basis, ternary or quaternary ceramic layer systems on metal substrates with outstanding tribological properties as well as silicon- or carbon-containing oxide layers with outstanding barrier properties on plastic substrates are being investigated. For this purpose, the latest, partially self-developed source technology is used and characterized with a very broad, complementary spectrum of quantitative, also partially newly developed plasma diagnostics and one-off single-particle beam experiments. The focus is on pulsed high-power plasmas, such as High Power Pulsed Magnetron Sputtering (HiPIMS) systems, multi-frequency capacitively coupled plasma (MFCCP) systems and pulsed and high-frequency bias-driven microwave (MW) microwave systems, and inductively coupled plasmas (ICP). In order to meet the above vision, the goal is to explore the relationships between material properties and plasma parameters, to quantify them and to use them for plasma control, layer development and in-situ layer control. In this way, the previously prevailing empirical approach is overcome and a physically and chemically based process understanding is developed.