Spatio-temporal plots for different N2 admixtures of the measured and individually normalized emission at 391 nm [(a) - (c)], of the time modulated component of the data shown in the first row [(d) - (f)], of simulation results of the total electron impact excitation rate into the N+ 2 (B)-state [pathways (I) + (II), (g) (I)], the electron impact excitation rate from the molecular ground state [pathway (I), (j) - (l)] and the ionic ground state [pathway (II), (m) - (o)] of N2 into the N+ 2 (B)-state. Plots (p) - (r) show the spatial profiles of the normalized time averaged excitation rate of the N+ 2 (B)-state via Penning ionization obtained from the simulation (red lines) and of the temporally constant component of the total emission obtained from the experiment (blue lines). Data are shown for φ = 315 V.
Experimental data are marked as exp
Simulation data are marked as sim
x [t/TRf], y[mm]
(Figure4a-4c): exp Exc. Rate [a. u.] for 391nm emission line for 0.5sccm, 2.5sccm and 5sccm respectively
(Figure4d-4f): exp Exc. Rate [a. u.] without Penning for 0.5sccm, 2.5sccm and 5sccm respectively
(Figure4g-4i): sim Exc. Rate [a. u.] of total excitation for 0.5sccm, 2.5sccm and 5sccm respectively
(Figure4j-4l): sim Exc. Rate [a. u.] of electron excitation from N2 for 0.5sccm, 2.5sccm and 5sccm respectively
(Figure4m-4o): sim Exc. Rate [a. u.] of electron excitation from N2*(X) for 0.5sccm, 2.5sccm and 5sccm respectively

x [a.u.], y[mm].
(Figure4p_red-4r_red): exp Exc. Rate [a. u.] of N2+(B)-state ) for 0.5sccm, 2.5sccm and 5sccm respectively
(Figure4p_blue-4r_blue): sim Exc. Rate [a. u.] of N2+(B)-state ) for 0.5sccm, 2.5sccm and 5sccm respectively