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1118 results

Low temperature growth of gallium oxide thin films via plasma enhanced atomic layer deposition

Inorganic Materials Chemistry

Plasma for Materials / Surfaces

Herein we describe an efficient low temperature (60–160 °C) plasma enhanced atomic layer deposition (PEALD) process for gallium oxide (Ga2O3) thin films using hexakis(dimethylamido)digallium [Ga(NMe2)3]2 with oxygen (O2) plasma on Si(100). The...

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Low temperature growth of gallium oxide thin films via plasma enhanced atomic layer deposition

Inorganic Materials Chemistry

Low temperature growth of gallium oxide thin films via plasma enhanced atomic layer deposition

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An efficient PE-ALD process for TiO2 thin films employing a new Ti-precursor

Inorganic Materials Chemistry

Plasma for Materials / Surfaces

An efficient plasma-enhanced atomic layer deposition (PE-ALD) process was developed for TiO2 thin films of high quality, using a new Ti-precursor, namely tris(dimethylamido)-(dimethylamino-2-propanolato)titanium(IV) (TDMADT). The five-coordinated...

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An efficient PE-ALD process for TiO2 thin films employing a new Ti-precursor

Inorganic Materials Chemistry

An efficient PE-ALD process for TiO2 thin films employing a new Ti-precursor

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Unearthing [3‐(Dimethylamino)propyl]aluminium(III) Complexes as Novel Atomic Layer Deposition (ALD) Precursors for Al2O3: Synthesis, Characterization and ALD Process Development

Inorganic Materials Chemistry

Plasma for Materials / Surfaces

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Catalyst‐enhanced plasma oxidation of n‐butane over α‐MnO2 in a temperature‐controlled twin surface dielectric barrier discharge reactor

Laboratory of Industrial Chemistry

Plasma Chemical Processes

A twin surface dielectric barrier discharge is used for the catalyst‐enhanced plasma oxidation of 300 ppm n‐butane in synthetic air. Plasma‐only operation results in the conversion of n‐butane into CO and CO2. Conversion is improved by increasing...