{"help":"Return the metadata of a dataset (package) and its resources. :param id: the id or name of the dataset :type id: string","success":true,"result":[{"id":"592db74e-084f-4689-9045-2df7693ed5a6","name":"peald-hfo2-thin-films-precursor-tuning-and-new-near-ambient-pressure-xps-approach-situ","title":"PEALD of HfO2 Thin Films: Precursor Tuning and a New Near-Ambient-Pressure XPS Approach to in Situ Examination of Thin-Film Surfaces Exposed to Reactive Gases","author_email":"anjana.devi@rub.de","maintainer":"Research Data Repository","maintainer_email":"achim.vonkeudell@rub.de","license_title":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/","notes":"\u003Cp\u003EA bottom-up approach starting with the development of new Hf precursors for plasma-enhanced atomic layer deposition (PEALD) processes for HfO2 followed by in situ thin-film surface characterization of HfO2 upon exposure to reactive gases via near-ambient-pressure X-ray photoelectron spectroscopy (NAP-XPS) is reported. The stability of thin films under simulated operational conditions is assessed, and the successful implementation of HfO2 dielectric layers in metal\u2013insulator\u2013semiconductor (MIS) capacitors is demonstrated. Among the series of newly synthesized mono-guanidinato-tris-dialkyl-amido class of Hf precursors, one of them, namely, [Hf{\u03b72-(iPrN)2CNEtMe}(NEtMe)3], was representatively utilized with oxygen plasma, resulting in a highly promising low-temperature PEALD process at 60 \u00b0C. The new precursors were synthesized in the multigram scale and thoroughly characterized by thermogravimetric analyses, revealing high and tunable volatility reflected by appreciable vapor pressures and accompanied by thermal stability. Typical ALD growth characteristics in terms of linearity, saturation, and a broad ALD window with constant growth of 1.06 \u00c5 cycle\u20131 in the temperature range of 60\u2013240 \u00b0C render this process very promising for fabricating high-purity smooth HfO2 layers. For the first time, NAP-XPS surface studies on selected HfO2 layers are reported upon exposure to reactive H2, O2, and H2O atmospheres at temperatures of up to 500 \u00b0C revealing remarkable stability against degradation. This can be attributed to the absence of surface defects and vacancies. On the basis of these promising results, PEALD-grown HfO2 films were used as dielectric layers in the MIS capacitor device fabrication exhibiting leakage current densities less than 10\u20137 A cm\u20132 at 2 MV cm\u20131 and permittivities of up to 13.9 without postannealing.\u003C\/p\u003E\n","url":"https:\/\/rdpcidat.rub.de\/dataset\/peald-hfo2-thin-films-precursor-tuning-and-new-near-ambient-pressure-xps-approach-situ","state":"Active","log_message":"Update to resource PEALD of HfO2 Thin Films: Precursor Tuning and a New Near-Ambient-Pressure XPS Approach to in Situ Examination of Thin-Film Surfaces Exposed to Reactive Gases","private":true,"revision_timestamp":"Thu, 04\/25\/2024 - 16:09","metadata_created":"Fri, 04\/24\/2020 - 12:46","metadata_modified":"Thu, 04\/25\/2024 - 16:09","creator_user_id":"a3d3820b-5155-4810-ab1b-227b1eed2c58","type":"Dataset","resources":[{"id":"e0da5070-bb13-4a50-bc68-0e7c79d8b409","revision_id":"","url":"https:\/\/doi.org\/10.1021\/acsami.9b07090","description":"","format":"html","state":"Active","revision_timestamp":"Thu, 04\/25\/2024 - 16:09","name":"PEALD of HfO2 Thin Films: Precursor Tuning and a New Near-Ambient-Pressure XPS Approach to in Situ Examination of Thin-Film Surfaces Exposed to Reactive Gases","mimetype":"html","size":"","created":"Fri, 04\/24\/2020 - 12:46","resource_group_id":"efd12b80-2fad-4ff2-8d78-c87e08b01ea8","last_modified":"Date changed  Thu, 04\/25\/2024 - 16:09"}],"tags":[{"id":"b04586ca-dbd7-49ff-8f5d-1f6a228b654a","vocabulary_id":"2","name":"PEALD"},{"id":"082b763f-d8de-45b5-823d-786bc29caf5e","vocabulary_id":"2","name":"Thin films"},{"id":"5d31bd8a-cf85-46ba-9028-3f7ea3c05e22","vocabulary_id":"2","name":"HfO2"}],"groups":[{"description":"\u003Cp\u003EOur group focuses on the development, synthesis and evaluation of high-performance precursors for vapor phase deposition processes namely chemical vapor deposition (CVD), atomic layer deposition (ALD) and molecular layer deposition (MLD).\u003C\/p\u003E\n","id":"efd12b80-2fad-4ff2-8d78-c87e08b01ea8","image_display_url":"https:\/\/rdpcidat.rub.de\/sites\/default\/files\/logo_0.png","title":"Inorganic Materials Chemistry","name":"group\/inorganic-materials-chemistry"}]}]}