{"help":"Return the metadata of a dataset (package) and its resources. :param id: the id or name of the dataset :type id: string","success":true,"result":[{"id":"53fd13fb-7fc7-438a-8eb9-8801d506ccc1","name":"low-temperature-plasma-enhanced-atomic-layer-deposition-tiniv-oxide-functionalized-alkyl","title":"Low-Temperature Plasma-Enhanced Atomic Layer Deposition of Tin(IV) Oxide from a Functionalized Alkyl Precursor: Fabrication and Evaluation of SnO2-Based Thin-Film Transistor Devices","author_email":"anjana.devi@rub.de","maintainer":"Research Data Repository","maintainer_email":"achim.vonkeudell@rub.de","license_title":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/","notes":"\u003Cp\u003EA bottom-up process from precursor development for tin to plasma-enhanced atomic layer deposition (PEALD) for tin(IV) oxide and its successful implementation in a working thin-film transistor device is reported. PEALD of tin(IV) oxide thin films at low temperatures down to 60 \u00b0C employing tetrakis-(dimethylamino)propyl tin(IV) [Sn(DMP)4] and oxygen plasma is demonstrated. The liquid precursor has been synthesized and thoroughly characterized with thermogravimetric analyses, revealing sufficient volatility and long-term thermal stability. [Sn(DMP)4] demonstrates typical saturation behavior and constant growth rates of 0.27 or 0.42 \u00c5 cycle\u20131 at 150 and 60 \u00b0C, respectively, in PEALD experiments. Within the ALD regime, the films are smooth, uniform, and of high purity. On the basis of these promising features, the PEALD process was optimized wherein a 6 nm thick tin oxide channel material layer deposited at 60 \u00b0C was applied in bottom-contact bottom-gate thin-film transistors, showing a remarkable on\/off ratio of 107 and field-effect mobility of \u03bcFE \u2248 12 cm2 V\u20131 s\u20131 for the as-deposited thin films deposited at such low temperatures.\u003C\/p\u003E\n","url":"https:\/\/rdpcidat.rub.de\/dataset\/low-temperature-plasma-enhanced-atomic-layer-deposition-tiniv-oxide-functionalized-alkyl","state":"Active","log_message":"Update to resource Low-Temperature Plasma-Enhanced Atomic Layer Deposition of Tin(IV) Oxide from a Functionalized Alkyl Precursor: Fabrication and Evaluation of SnO2-Based Thin-Film Transistor Devices","private":true,"revision_timestamp":"Thu, 04\/25\/2024 - 16:09","metadata_created":"Fri, 04\/24\/2020 - 12:54","metadata_modified":"Thu, 04\/25\/2024 - 16:09","creator_user_id":"a3d3820b-5155-4810-ab1b-227b1eed2c58","type":"Dataset","resources":[{"id":"91dcaa65-bef3-48f3-9755-520c44aa0403","revision_id":"","url":"https:\/\/doi.org\/10.1021\/acsami.8b16443","description":"","format":"html","state":"Active","revision_timestamp":"Thu, 04\/25\/2024 - 16:09","name":"Low-Temperature Plasma-Enhanced Atomic Layer Deposition of Tin(IV) Oxide from a Functionalized Alkyl Precursor: Fabrication and Evaluation of SnO2-Based Thin-Film Transistor Devices","mimetype":"html","size":"","created":"Fri, 04\/24\/2020 - 12:54","resource_group_id":"efd12b80-2fad-4ff2-8d78-c87e08b01ea8","last_modified":"Date changed  Thu, 04\/25\/2024 - 16:09"}],"tags":[{"id":"b04586ca-dbd7-49ff-8f5d-1f6a228b654a","vocabulary_id":"2","name":"PEALD"},{"id":"b8b2ce26-98a1-4f58-83ad-4b953cbadfdc","vocabulary_id":"2","name":"Precursor chemistry"},{"id":"2d22fbff-c26b-49aa-b13a-031e4e0566ac","vocabulary_id":"2","name":"SnO2"},{"id":"082b763f-d8de-45b5-823d-786bc29caf5e","vocabulary_id":"2","name":"Thin films"}],"groups":[{"description":"\u003Cp\u003EOur group focuses on the development, synthesis and evaluation of high-performance precursors for vapor phase deposition processes namely chemical vapor deposition (CVD), atomic layer deposition (ALD) and molecular layer deposition (MLD).\u003C\/p\u003E\n","id":"efd12b80-2fad-4ff2-8d78-c87e08b01ea8","image_display_url":"https:\/\/rdpcidat.rub.de\/sites\/default\/files\/logo_0.png","title":"Inorganic Materials Chemistry","name":"group\/inorganic-materials-chemistry"}]}]}